Title :
mc-Si thin films by hydrogen plasma assisted vacuum evaporation
Author :
Miranda, Diego O. ; Moura, Thiago D O ; Santana, Romeu J. ; Guimaraes, Gilson R. ; Karger, Erich R S ; Diniz, Antonia Sonia A C ; Branco, Jose Roberto T
Author_Institution :
Fundacao Centro Tecnol. de Minas Gerais, Belo Horizonte, Brazil
Abstract :
In the present work the effect of auxiliary plasma assistance on the structure, composition and optical gap of e-beam vacuum evaporated silicon thin films is investigated. The films were deposited over glass and Silicon wafer substrates, under argon-hydrogen plasma assisted, to verify also the effect of the H2 content, at substrate temperature of 250°C. The species present in the plasmas were investigated using Optical Emission Spectroscopy, while the films were characterized by Raman, FTIR and UV-vis spectroscopy. The results show that the deposition of a-Si:H with high hydrogen content and mc-Si:H through the used low temperature plasma assisted vacuum evaporation. The relationship between crystallinity, optical band gap and species in the Plasma is discussed, considering the effect of molecular and atomic hydrogen content in the plasma, as well as a-Si chemical annealing theories.
Keywords :
Fourier transform spectra; Raman spectra; amorphous semiconductors; annealing; argon compounds; energy gap; infrared spectra; optical constants; plasma materials processing; semiconductor thin films; silicon; solar cells; ultraviolet spectra; vacuum deposition; visible spectra; FTIR spectroscopy; Raman spectroscopy; Si:H; UV spectroscopy; argon-hydrogen plasma; chemical annealing theory; e-beam vacuum evaporated silicon thin films; optical emission spectroscopy; optical gap; plasma assisted vacuum evaporation; silicon wafer substrates; temperature 250 degC; Annealing; Argon; Chemicals; Optical scattering; Plasmas;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5617133
