Title :
Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers
Author :
Fuchs, G. ; Schiedel, C. ; Hangleiter, A. ; Hirle, V. ; Scholz, F.
Author_Institution :
Universitat-Stuttgart
Abstract :
We report the determination of the Auger recombination coefficient in unstrained and strained InGaAs/InGaAsP/InP SC-MQW laser structures. The weak temperature dependence of the Auger coefficient indicates the dominance of the phonon-assisted CHSH Auger process. For T = 300K and L/sub z/ = 100/spl Aring/ we find C = 1.0 - 10/sup -28/crn/sup 6/s/sup -1/, independent of strain.
Keywords :
Absorption; Charge carrier density; Indium gallium arsenide; Luminescence; Quantum well devices; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature dependence; Transient analysis;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763554
