• DocumentCode
    2785811
  • Title

    Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers

  • Author

    Fuchs, G. ; Schiedel, C. ; Hangleiter, A. ; Hirle, V. ; Scholz, F.

  • Author_Institution
    Universitat-Stuttgart
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    24
  • Lastpage
    25
  • Abstract
    We report the determination of the Auger recombination coefficient in unstrained and strained InGaAs/InGaAsP/InP SC-MQW laser structures. The weak temperature dependence of the Auger coefficient indicates the dominance of the phonon-assisted CHSH Auger process. For T = 300K and L/sub z/ = 100/spl Aring/ we find C = 1.0 - 10/sup -28/crn/sup 6/s/sup -1/, independent of strain.
  • Keywords
    Absorption; Charge carrier density; Indium gallium arsenide; Luminescence; Quantum well devices; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature dependence; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763554
  • Filename
    763554
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2785811