DocumentCode :
2785821
Title :
An experimental and theoretical analysis of the influence of compressive strain on 1.5 /spl mu/m quantum well lasers
Author :
Adams, A.R. ; Wilkinson, V.A. ; Braithwaite, J. ; Silver, M. ; O´Reilly, E.P.
Author_Institution :
University of Surrey
fYear :
1992
fDate :
21-25 Sept. 1992
Firstpage :
26
Lastpage :
27
Abstract :
Lasers containing compressively strained quantum wells show reduced threshold current, intervalence band absorption, Auger recombination coefficient and in-plane hole mass. The measured values of these parameters account accurately for the observed device temperature sensitivity.
Keywords :
Capacitive sensors; Electron emission; Laser theory; Laser transitions; Quantum well lasers; Radiative recombination; Temperature dependence; Temperature measurement; Temperature sensors; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
Type :
conf
DOI :
10.1109/ISLC.1992.763555
Filename :
763555
Link To Document :
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