DocumentCode
2785826
Title
Understanding the growth mechanisms of electron beam induced deposition via a Monte - Carlo based, 3D growth simulation
Author
Smith, D.A. ; Rack, P.D. ; Fowlkes, J.D. ; Liang, T.
Author_Institution
Materials Science and Engineering Department University of Tennessee Knoxville, TN, Dsmith26@utk.edu
Volume
2
fYear
2006
fDate
17-20 July 2006
Firstpage
659
Lastpage
661
Abstract
Electron beam induced deposition (EBID) and etching (EBIE) is rapidly becoming the method of choice for nanoscale selective processing because is it a softer less damaging process relative to focused ion beam processing. Deposition with tungsten-hexafluoride (WF6) and tetra-ethyl-ortho-silicate (TEOS) sources have been shown to efficiently deposit tungsten and SiOx, respectively; however the distinct differences in material properties affect the final deposit morphology. Initial results from experiments show the distinct shapes formed from the two dissociation reactions have been reproduced using a Monte-Carlo based 3D algorithm which was designed specifically to predict such behavior. The effective Bethe stopping range determines the resultant nanopillar morphology under similar WF6 and TEOS EBID conditions. Simulations and experimental results show that the morphology is cylindrical when the fiber height is greater than the effective range and is conical when less than the effective range.
Keywords
EBID; Monte-Carlo; modeling; simulation; Computational modeling; Computer simulation; Electron beams; Etching; Ion beams; Materials science and technology; Optical materials; Scattering; Surface morphology; Tungsten; EBID; Monte-Carlo; modeling; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Conference_Location
Cincinnati, OH, USA
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247740
Filename
1717190
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