• DocumentCode
    2785846
  • Title

    Improved performance in tensile-strained long wavelength lasers

  • Author

    Jones, G. ; Silver, M. ; Hawley, M. ; O´Reilly, E.P. ; Adams, A.R. ; Thijs, P.J.A.

  • Author_Institution
    University of Surrey
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    30
  • Lastpage
    31
  • Abstract
    A tensile-strained active region enhances TM gain, reducing radiative currents in semiconductor lasers. Auger recombination is reduced but not intervalence band absorption. Tensile InGaAs/InGaAsP approaches a Type II band line-up, increasing barrier-related losses.
  • Keywords
    Charge carrier density; Electrons; Laser theory; Quantum well lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission; Temperature; Tensile strain; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763557
  • Filename
    763557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2785846