Title :
Reduction of linewidth enhancement factor in InGaAsP/InP modulation-doped strained multiple-quantum-well lasers
Author :
Kano, F. ; Yamanaka, T. ; Yamamoto, N. ; Yoshikuni, Y. ; Mawatari, H. ; Tohmori, Y. ; Yamamoto, M. ; Yokoyama, K.
Author_Institution :
NTT Opto-electronics Laboratories
Abstract :
Reduction of the linewidth enhancement factor cc is demonstrated in 1.3 /spl mu/m InGaAsP/InP modulation-doped strained multiple-quantum-well lasers. A small /spl alpha/ value of less than I is obtained with positive gain.
Keywords :
Chirp; Doping; Epitaxial layers; Frequency estimation; Indium phosphide; Laboratories; Laser theory; Quantum well devices; Semiconductor lasers; Wavelength measurement;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763558
