Title :
Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs)
Author :
Seki, Satoshi ; Sotirelis, P. ; Hess, K.
Author_Institution :
University of Illinois at Urbana-Champaign
Abstract :
The gain saturation coefficient c in InGaAsIAIGaAs strained layer quantum well lasers is the oretically analyzed by taking into account the effect of strain on the intra-su&band relaxation time. It is demonstrated that the gain saturation coefficient increases with compressive strain in the active layer of quantum wells due to an increase of the intra-subband relaxation time.
Keywords :
Bandwidth; Capacitive sensors; Effective mass; Indium gallium arsenide; Laboratories; Laser theory; Optical fiber communication; Quantum mechanics; Quantum well lasers; Semiconductor lasers;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763562
