• DocumentCode
    2785983
  • Title

    Improvement of high power/high temperature operation of long wavelength laser diodes by band discontinuity reduction layer

  • Author

    Takemoto, A. ; Matsurnoto, K. ; Nishiguchi, H. ; Takiguchi, T. ; Nakajima, Y. ; Omura, E. ; Aiga, M.

  • Author_Institution
    Mitsubishi Electric Corporation
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    48
  • Lastpage
    49
  • Abstract
    50 percent increase of maximum output power and 25 percent decrease of operating current at 70/spl deg/C,5mW in long wavelength laser diodes have been realized by the introduction of intermediate composite layer between a cladding layer and an active layer.
  • Keywords
    Chemical vapor deposition; Controllability; Diode lasers; Epitaxial growth; Laboratories; Microwave devices; Microwave theory and techniques; Optical device fabrication; Power generation; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763565
  • Filename
    763565
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2785983