Title :
Channel guide InGaAs-GaAs-InGaP strained quantum well lasers on P-type GaAs substrate for high power operation
Author :
Sin, Y.K. ; Horikawa, H. ; Kamijoh, T.
Author_Institution :
Oki Electric Industry Co., Ltd
Abstract :
Channel guide lasers are, for the first time, demonstrated with ln/sub 0.18/Ga/sub 0.82/As-GaAs-In/sub 0.49/Ga/sub 0.51/P strained quantum well heterostructure on p-type GaAs substrate (/spl lambda/L= 980nm). The uncoated lasers show CW laser thresholds of 12mA at RT and high output powers of 125mW.
Keywords :
Epitaxial growth; Epitaxial layers; Etching; Gallium arsenide; P-n junctions; Power generation; Power lasers; Quantum well lasers; Silicon compounds; Substrates;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763566
