Title :
Low stress and low dislocation density AlGaAs/GaAs laser diodes fabricated on Si substrates
Author :
Wada, N. ; Yosfumi, S. ; Sakai, S. ; Fukui, M.
Author_Institution :
Tokushima University
Abstract :
AlGaAs/GaAs double-hetero-structure laser diodes utilizing the UCGAS (undercut GaAs on Si) which had very low dark spot density and the thermal stress have been fabricated. The diodes lased successfully under pulsed condition at room temperature.
Keywords :
Annealing; DH-HEMTs; Diode lasers; Gallium arsenide; Laser sintering; Light emitting diodes; MOCVD; Photoluminescence; Temperature; Thermal stresses;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763568
