• DocumentCode
    2786030
  • Title

    Characteristics of InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy

  • Author

    Zhang, G. ; Outchinnikov, A. ; Nappi, J. ; Asonen, H. ; Pessa, M.

  • Author_Institution
    Tampere University of Technology
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    56
  • Lastpage
    57
  • Abstract
    Strained-layer InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy (GSMBE) are reported. The characteristics of these lasers are comparable to those of the best results of InGaAs/GaAs/AlGaAs lasers.
  • Keywords
    Gallium arsenide; Gas lasers; Indium gallium arsenide; Laser theory; Molecular beam epitaxial growth; Physics; Quantum well lasers; Radiative recombination; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763569
  • Filename
    763569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2786030