Title :
Application of reactive ion etching using C/sub 2/H/sub 6//H/sub 2/O/sub 2/ to fabricate a 1.48 /spl mu/m lnGaAsP/InP p-substrate buried-heterostructure laser diode
Author :
Sugimoto, H. ; Isu, T. ; Tada, H. ; Miura, T. ; Shiba, T. ; Kimura, T. ; Takemoto, A.
Author_Institution :
Mitsubishi Electric Corporation
Abstract :
Reactive ion etching using C/sub 2/H/sub 6//H/sub 2//O/sub 2/ realized sufficiently smooth etched surface and little side-etching for the fabrication of ridge mesa structures of the commercially produced PPlBH laser diodes. No degradation of the laser characteristics was observed.
Keywords :
Aging; Diode lasers; Electrons; Indium phosphide; Life estimation; Rough surfaces; Surface roughness; Temperature; Threshold current; Wet etching;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763570
