• DocumentCode
    2786045
  • Title

    Application of reactive ion etching using C/sub 2/H/sub 6//H/sub 2/O/sub 2/ to fabricate a 1.48 /spl mu/m lnGaAsP/InP p-substrate buried-heterostructure laser diode

  • Author

    Sugimoto, H. ; Isu, T. ; Tada, H. ; Miura, T. ; Shiba, T. ; Kimura, T. ; Takemoto, A.

  • Author_Institution
    Mitsubishi Electric Corporation
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    58
  • Lastpage
    59
  • Abstract
    Reactive ion etching using C/sub 2/H/sub 6//H/sub 2//O/sub 2/ realized sufficiently smooth etched surface and little side-etching for the fabrication of ridge mesa structures of the commercially produced PPlBH laser diodes. No degradation of the laser characteristics was observed.
  • Keywords
    Aging; Diode lasers; Electrons; Indium phosphide; Life estimation; Rough surfaces; Surface roughness; Temperature; Threshold current; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763570
  • Filename
    763570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2786045