Title :
Development of 2.2 /spl mu/m emission ridge waveguide lasers with low threshold GaInAsSb/GaAlAsSb DH wafers
Author :
Morosini, M.B.Z. ; Herrera-Perez, J.L. ; da Silveira, A.C.F. ; Von Zuben, A.A.G. ; Loural, M.S.S. ; Patel, N.B.
Author_Institution :
Instituto de Fisica "GLEB WATAGHIN"-UNICAMP
Abstract :
We show that the development of 2.Z/spl mu/m emission low threshold Ridge Waveguide lasers from GaInAsSb/GaAIAsSb DH wafers is limited by the excessive current spread in the low resistivity p-type active layer.
Keywords :
Chemical lasers; Chemical processes; Conductivity; DH-HEMTs; Doped fiber amplifiers; Etching; Optical device fabrication; Optical pulses; Temperature; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763571
