Title :
Selective-area Growth of the Hexagonal Nano-pillars with Single InGaAs/GaAs Quantum Well and Their Temperature-dependence Photoluminescence
Author :
Yang, L. ; Motohisa, J. ; Takeda, J. ; Tomioka, Katsuhiro ; Fukui, T. ; Yang, Lei ; Motohisa, J. ; Takeda, Jun ; Tomioka, Katsuhiro ; Fukui, T.
Author_Institution :
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060-8628, Japan. E-mail: lyang@rciqe.hokudai.ac.jp and lyang@red.semi.ac.cn
Abstract :
Hexagonal nano-pillars with single InGaAs/GaAs quantum well (QW) were fabricated successfully on the GaAs
Keywords :
Epitaxial growth; Fabrication; Gallium arsenide; Indium gallium arsenide; Lattices; Lithography; Photoluminescence; Substrates; Temperature; Wet etching; InGaAs/GaAs quantum well; hexagonal nano-pillars; selective-area MOVPE; temperature-dependence photoluminescence;
Conference_Titel :
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN :
1-4244-0077-5
DOI :
10.1109/NANO.2006.247752
