Polarization dependent a-factor in InGaAs/InGaAsP MQW material

Author

Soerensen, M. ; Storkfelt, N. ; Jepsen, K.S. ; Mikkelsen, B. ; Stubkjaer, K.E.

Author_Institution

Technical University of Denmark

fYear

1992

fDate

21-25 Sept. 1992

Firstpage

62

Lastpage

63

Abstract

Multiple Quantum Well (MQW) structures are of high interest for many types of op tical devices because of the improved performance. Material parameters such as the linewidth enhancement factor (or-factor) [1] and the related differential gain (dg/dN) and differential refractive index (dn/dN) are essential in the design of lasers and optical amplifiers, because they govern important properties as linewidth, frequency response and resonance frequency. So far, most of the characterization has been carried out for the TE-polarization, but the polarization dependence of these parameters is important to the optimization of the MQW structures. Here we present measurements of the polarization dependence of dn/dN, dg/dN and the or-factor in a MQW amplifier. Theoretical results are also presented and reasonable agreement with measured data is obtained.

Keywords

Buildings; Electromagnetic devices; Electromagnetic wave polarization; Indium gallium arsenide; Optical materials; Performance evaluation; Plasma density; Plasma measurements; Quantum well devices; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International

Conference_Location

Kagazwa, Japan

Print_ISBN

4-930813-51-4

Type

conf

DOI

10.1109/ISLC.1992.763572

Filename

763572