Title :
Very low threshold current operation of semiconductor ring lasers
Author :
Krauss, T. ; Layboum, P.J.R.
Author_Institution :
University of Glasgow
Abstract :
Semiconductor ring lasers with a threshold current as low as 12.5mA have been fabricated in GaAs/AlGaAs. The excess bending loss is calculated to 3dB/360/spl deg/ and found to be independent of the radius between 30p/spl mu/ and 145/spl mu/m. Kinks in the L-1 curve are explained by temperature-induced shifts of the mode position.
Keywords :
Circuits; Gallium arsenide; Laser modes; Light scattering; Particle scattering; Ring lasers; Semiconductor lasers; Silicon; Surface resistance; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763574
