Title :
30 mw 690 nm high-power strained-quantum-well AlGaInP laser with Al/sub 2/O/sub 3/-coated mirror facets
Author :
Ueno, Y. ; Fujii, H. ; Sawano, H. ; Endo, K. ; Kobayashi, K. ; Hara, K.
Author_Institution :
NEC Corporation
Abstract :
Abstract: 30-mW stable operation at 500C over 2,000 hours has been achieved for transverse-mode-stabilized 690-nm AlGaInp lasers by using Al/sub 2/O/sub 3/-coated mirror facets and a strained-quanturn-well active layer.
Keywords :
Charge carrier density; Degradation; Laboratories; Laser stability; Mirrors; National electric code; Power generation; Power lasers; Quantum well lasers; Temperature;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763586
