Title :
High-power AlGaInP visible laser diodes with a non-absorbing window-structure
Author :
Kamizato, T. ; Arimoto, S. ; Watanabe, H. ; Kadoiwa, K. ; Omura, E. ; Kakimoto, S. ; Ikeda, K.
Author_Institution :
Mitsubishi Electric Corporation
Abstract :
A non-absorbing window-structure formed by solid phase diffusion has been employed to AlGaInP visible laser diodes with a multi-quantum barrier(MQB) and a strained active layer for the first time. Maximum output power density over 18MW/cm /sup 2/ without optical damage and stable operation under 40-50mW CW conditions are demonstrated.
Keywords :
Aging; Diode lasers; Electrons; Laboratories; Microwave devices; Optical pulses; Power generation; Solids; Testing; Writing;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763588
