Title :
Issues in the design of MQW modulator arrays
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ.
Abstract :
Three types of MQW structure have been investigated for use in electro-absorption modulators, and aspects of their integration within matrix-addressable arrays have been discussed. Conventional isolated well structures offer high modulation depths both as isolated devices and within arrays, for drive voltages of 25 V. Although superlattice structures exhibit changes in the absorption spectrum at low drive voltages, modulation depths are low. MQW structures incorporating pairs of coupled wells potentially offer useful modulation depths combined with low working voltages. An alternative (and complementary) approach to reducing drive voltage is the use of asymmetric Fabry-Perot structures. The 2:1 voltage contrast imposed by matrix addressing could be improved to 3:1 by using back-to-back devices with two intrinsic active layers. Quantum confined Stark effect QCSE devices could also be addressed directly by `solder bumping´ onto a silicon IC
Keywords :
electro-optical devices; electroabsorption; integrated optoelectronics; optical information processing; optical interconnections; optical modulation; semiconductor quantum wells; 25 V; MQW modulator arrays; QCSE devices; Si integrated circuit; asymmetric Fabry-Perot structures; back-to-back devices; design; electro-absorption modulators; integration; isolated well structures; matrix-addressable arrays; n-i-p-i-n structures; pairs of coupled wells; quantum confined Stark effect; resonant tunnelling; solder bumping;
Conference_Titel :
Two-Dimensional Optoelectronic Device Arrays, IEE Colloquium on
Conference_Location :
London
