DocumentCode
2786444
Title
All-optical modulation of semiconductor laser by using three energy levels in n-doped quantum well
Author
Noda, S. ; Yamashita, T. ; Ohya, M. ; Muromoto, Y. ; Sasaki, A.
Author_Institution
Kyoto University
fYear
1992
fDate
21-25 Sept. 1992
Firstpage
116
Lastpage
117
Abstract
A new all-optical modulation of semiconductor laser is demonstrated by using three energy levels in n-doped quantum well. It is shown experimentally that the interband-light (semiconductor laser light) can be modulated by the intraband-light (CO/sub 2/ laser light).
Keywords
Electrons; Electrooptic modulators; Energy states; Gallium arsenide; Lasers and electrooptics; Optical modulation; Quantum well devices; Quantum well lasers; Semiconductor lasers; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location
Kagazwa, Japan
Print_ISBN
4-930813-51-4
Type
conf
DOI
10.1109/ISLC.1992.763599
Filename
763599
Link To Document