Title :
Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region
Author :
Nonaka, K. ; Tsuda, H. ; Kurokawa, T. ; Uenohara, H. ; lwamura, H.
Author_Institution :
NTT Opto-electronics Laboratories
Abstract :
A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output ( over 30 dB) are observed.
Keywords :
Absorption; Diode lasers; Indium gallium arsenide; Indium phosphide; Lighting control; Optical bistability; Optical control; Optical sensors; Optical waveguides; Quantum well devices;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763607
