A Study on PIN Solar Cell with a-Si:H/mc-Si:H Double-Intrinsic Layer

This paper put forward a novel PIN solar cell structure with a-Si: H/uc-Si:H double-intrinsic layer. And by establishing the model of photocurrent density of this structure an optimized thickness and band gap were obtained. The simulating results obtained by inputting the data and parameters into AMPS program indicate that compared to single-junction amorphous silicon solar cells, the microcrystalline silicon layer did not cause changes in cell performance. However, due to the reduction in the amorphous silicon layer´ thickness, the light-induced fading effects was well suppressed.