DocumentCode
2786679
Title
Transverse spin relaxation times in an ensemble of electrochemically self assembled CdS quantum dots
Author
Pramanik, S. ; Kanchibotla, B. ; Bandyopadhyay, S.
Author_Institution
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284, USA
Volume
2
fYear
2006
fDate
17-20 June 2006
Firstpage
846
Lastpage
849
Abstract
Using electron spin resonance (ESR) experiments, we have measured the ensemble transverse relaxation time (T2 *) of spins in arrays of cadmium sulfide (CdS) quantum dots self assembled by selective electrodeposition of the compound in 10-nm diameter pores of an anodic alumina film. The T2 *time is very short - a few nanoseconds at low temperatures - and it increases with increasing temperature in the range 3.7 - 20 K. The major source of dephasing contributing to the relaxation rate is believed to be spatially varying hyperfine interactions with nuclear spins. The temperature dependence is consistent with the nuclear magnetic field being increasingly depolarized at higher temperatures leading to a progressively weaker hyperfine interaction. The effective Landé g-factor in the quantum dots was found to be ∼2.
Keywords
Spin dephasing; hyperfine interaction; quantum dots; Electrons; Extraterrestrial measurements; Magnetic field measurement; Paramagnetic resonance; Quantum computing; Quantum dots; Quantum mechanics; Temperature dependence; Time measurement; US Department of Transportation; Spin dephasing; hyperfine interaction; quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247791
Filename
1717241
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