Title :
Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm
Author :
Valster, A. ; van der Poel, C.J. ; Finke, M.N. ; Boermans, M.J.B.
Author_Institution :
Philips Optoelectronics Centre
Abstract :
For the first time the performance of visible lasers operating at 633 nm is reported as function of the amount of applied strain. Varying the strain between /spl delta/a/a = -1 % and /spl delta/a/a = + 1 % two minima in threshold current density have been found and are explained.
Keywords :
Capacitive sensors; DH-HEMTs; Diode lasers; Electrons; Light sources; Quantum well lasers; Surface emitting lasers; Temperature measurement; Tensile strain; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763615
