Title :
630 nm-band AlGaInP strained MQW laser diodes with an MQB grown on misoriented substrates
Author :
Hiroyama, R. ; Hamada, H. ; Shono, M. ; Honda, S. ; Yodoshi, K. ; Yamaguchi, T.
Author_Institution :
SANYO Electric Corporation
Abstract :
We report on 630 nm-band AIGalnP strained MQW laser diodes incorporating an MQB. The laser offer high-temperature operation over 60/spl deg/C and have been operating reliably for more than 1,000 h under 3 mW at 45/spl deg/C.
Keywords :
Artificial intelligence; Diode lasers; Electrons; Gallium arsenide; Gas lasers; MOCVD; Quantum well devices; Substrates; Temperature dependence; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763616
