DocumentCode
2786712
Title
Low threshold, high power, single mode 630 nm lasers
Author
Geels, R.S. ; Welch, D.F. ; Scifres, D.R. ; Bour, D.P. ; Treat, D.W. ; Bringans, R.D.
Author_Institution
Spectra Diode Laboratories
fYear
1992
fDate
21-25 Sept. 1992
Firstpage
156
Lastpage
157
Abstract
We report output powers exceeding 45 mW, under CW, room temperature operation from single mode AlGaInP visible lasers emitting at 636 run. Threshold currents as low as 30 mA and single mode output powers of 40 mW have been obtained.
Keywords
Laser modes; Mirrors; Optical materials; Power generation; Power lasers; Pump lasers; Semiconductor lasers; Solid lasers; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location
Kagazwa, Japan
Print_ISBN
4-930813-51-4
Type
conf
DOI
10.1109/ISLC.1992.763617
Filename
763617
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