DocumentCode
2786753
Title
Optically pumped 370 nm UV laser form MQW Cd/ZnS/ZnS strained-layer superlattices
Author
Yamada, Y. ; Mullins, J.T. ; Masumoto, Y. ; Taguchi, T.
Author_Institution
University of Tsukuba
fYear
1992
fDate
21-25 Sept. 1992
Firstpage
162
Lastpage
163
Abstract
We have shown for the first time a laser structure suitable for the injection of minority carriers and optically pumped stimulated emission from widegap CdZnS/ZnS multiple-quantum well (MQW) strained-layer superlattices. Laser emission takes place around 375 nm at room temperature with the threshold power density of above 100 KW/cm/sup 2/. The MQW structure doped with I donor is demonstrated for the injection laser diode.
Keywords
Excitons; Laser excitation; Laser sintering; Optical pumping; Optical scattering; Optical superlattices; Pump lasers; Quantum well devices; Stimulated emission; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location
Kagazwa, Japan
Print_ISBN
4-930813-51-4
Type
conf
DOI
10.1109/ISLC.1992.763620
Filename
763620
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