DocumentCode :
2786753
Title :
Optically pumped 370 nm UV laser form MQW Cd/ZnS/ZnS strained-layer superlattices
Author :
Yamada, Y. ; Mullins, J.T. ; Masumoto, Y. ; Taguchi, T.
Author_Institution :
University of Tsukuba
fYear :
1992
fDate :
21-25 Sept. 1992
Firstpage :
162
Lastpage :
163
Abstract :
We have shown for the first time a laser structure suitable for the injection of minority carriers and optically pumped stimulated emission from widegap CdZnS/ZnS multiple-quantum well (MQW) strained-layer superlattices. Laser emission takes place around 375 nm at room temperature with the threshold power density of above 100 KW/cm/sup 2/. The MQW structure doped with I donor is demonstrated for the injection laser diode.
Keywords :
Excitons; Laser excitation; Laser sintering; Optical pumping; Optical scattering; Optical superlattices; Pump lasers; Quantum well devices; Stimulated emission; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
Type :
conf
DOI :
10.1109/ISLC.1992.763620
Filename :
763620
Link To Document :
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