High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure

EA-modulator integrated DFB lasers have become one of the key devices in multigigabit long-distance lightwave communications. [1, 2] Recently, a new method of integrating photonic devices has been proposed, using the in-plane local bandgap energy control of the MQW structures during simultaneous selective area growth (SAG) by MOCVD. [3, 4] This technique offers a high optical coupling efficiency as well as reproducible fabrication, which are essential in such optical integrated devices. This paper describes an MQW EA-modulator integrated with a DFB laser, fabricated by SAG and a semi-insulating BH process, aimed at a high on/off ratio and high-speed operation.