Title :
High-speed operation of strained InGaAs/InGaAsP MQW lasers
Author :
Odagawa, T. ; Nakajima, K. ; Tanaka, K. ; Inoue, T. ; Okazaki, N. ; Wakao, K.
Author_Institution :
Fujitsu Laboratories
Abstract :
High-speed operation of InGaAs/InGaAsP strained-layer MQW lasers has been achieved at 70 /spl deg/C under zero-bias condition by optimizing the SCH structure.
Keywords :
Carrier confinement; Charge carrier lifetime; Delay effects; Diode lasers; Electrons; High speed optical techniques; Indium gallium arsenide; Quantum well devices; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763623
