• DocumentCode
    2786791
  • Title

    High-speed operation of strained InGaAs/InGaAsP MQW lasers

  • Author

    Odagawa, T. ; Nakajima, K. ; Tanaka, K. ; Inoue, T. ; Okazaki, N. ; Wakao, K.

  • Author_Institution
    Fujitsu Laboratories
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    170
  • Lastpage
    171
  • Abstract
    High-speed operation of InGaAs/InGaAsP strained-layer MQW lasers has been achieved at 70 /spl deg/C under zero-bias condition by optimizing the SCH structure.
  • Keywords
    Carrier confinement; Charge carrier lifetime; Delay effects; Diode lasers; Electrons; High speed optical techniques; Indium gallium arsenide; Quantum well devices; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763623
  • Filename
    763623
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2786791