Title :
Analysis on fm efficiency of InGaAs/InGaAsP SCH-MQW LDs Taking Injection Carrier Transport into Account
Author :
Yamazaki, H. ; Yamaguchi, M. ; Kitamura, M. ; Mito, I.
Author_Institution :
NEC Corporation
Abstract :
Injection carrier transport from SCH layers to wells in SCH-MQW LDs was found to play an important role for FM response. Both of the measured and the calculated results indicate that wide SCH layer is desirable for high FM efficiency operation.
Keywords :
Charge carrier density; Frequency modulation; Frequency shift keying; Indium gallium arsenide; Laboratories; Nonlinear equations; Nonlinear optics; Optical losses; Quantum well devices; Wavelength measurement;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763625
