Title :
Negative bi-exciton binding energy in (211)B InAs/GaAs piezoelectric quantum dots
Author :
Dialynas, G.E. ; Xenogianni, C. ; Trichas, E. ; Savvidis, P.G. ; Constantinidis, G. ; Hatzopoulos, Z. ; Pelekanos, N.T.
Author_Institution :
Microelectronics Research Group, IESL/FORTH, P.O. Box 1527, 71110 Heraklion, Greece
Abstract :
We report on isolated dot spectroscopy of polar (211)InAs/GaAs quantum dots grown by MBE. Exciton and biexciton peaks have been identified, revealing a negative biexciton binding energy attributed to the presence of strong piezoelectric field.
Keywords :
Apertures; Atom optics; Atomic force microscopy; Chromium; Excitons; Gallium arsenide; Molecular beam epitaxial growth; Quantum dots; Scanning electron microscopy; Spectroscopy;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431291
