Title :
Comparison of vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW Diode Lasers Designed for Monolithic Integration
Author :
Ralston, J.D. ; Weisser, S. ; Esquivias, I. ; Gallagher, D.F.G. ; Tasker, P.J. ; Rosenzweig, J. ; Fleissner, J.
Author_Institution :
Fraunltofer-Institut fur Angewandte Festkorperphysik
Abstract :
A detailed comparison is presented between vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW diode laser structures suitable for integration with MODFET driver circuits. Both devices show superior performance, although the advantages of replacing the GaAs QW´s with pseudomorphic InGaAs QW´s are clearly demonstrated.
Keywords :
Bandwidth; Diode lasers; Driver circuits; Gallium arsenide; MODFET circuits; Monolithic integrated circuits; Optical design; Optical receivers; Quantum cascade lasers; Quantum well devices;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763626
