• DocumentCode
    2786844
  • Title

    Strain-induced effects on the performance of AlGalnP Visible Lasers

  • Author

    Hashimoto, J. ; Katsuyama, T. ; Shinkai, J. ; Yoshida, I. ; Hayashi, H.

  • Author_Institution
    Sumitomo Electric Industries Ltd.
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    180
  • Lastpage
    181
  • Abstract
    We investigated strain-induced effects on the lasing condition of a strained AlGalnP laser in comparison with an unstrained device having similar band structure. Clear reduction in the threshold current density was observed by incorporating the strained quantum well structure.
  • Keywords
    Carrier confinement; Current density; Diode lasers; Laboratories; Light sources; Mirrors; Quantum well devices; Quantum well lasers; Research and development; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763627
  • Filename
    763627
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2786844