• DocumentCode
    2786856
  • Title

    Ordered and disordered GalnP/AlGalnP Strained Layer Quantum Well Visible-Light Emitting Laser Diodes

  • Author

    van der Poel, C.J. ; Valster, A. ; Finke, M.N. ; Boermans, M.I.B.

  • Author_Institution
    Philips Optoclectronics Centre
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    182
  • Lastpage
    183
  • Abstract
    GalnP/AIGalnP visible light emitting laser diodes arc of great interest. for use in high-density Optical Data Storage and laser printing. Low electrical power consumption and reliable high optical power output at a wavelength of /spl lambda = 675nm are a prerequisite for these applications.
  • Keywords
    Capacitive sensors; Costs; Diode lasers; Electrons; Epitaxial growth; Optical materials; Optical saturation; Printing; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763628
  • Filename
    763628