DocumentCode
2786856
Title
Ordered and disordered GalnP/AlGalnP Strained Layer Quantum Well Visible-Light Emitting Laser Diodes
Author
van der Poel, C.J. ; Valster, A. ; Finke, M.N. ; Boermans, M.I.B.
Author_Institution
Philips Optoclectronics Centre
fYear
1992
fDate
21-25 Sept. 1992
Firstpage
182
Lastpage
183
Abstract
GalnP/AIGalnP visible light emitting laser diodes arc of great interest. for use in high-density Optical Data Storage and laser printing. Low electrical power consumption and reliable high optical power output at a wavelength of /spl lambda = 675nm are a prerequisite for these applications.
Keywords
Capacitive sensors; Costs; Diode lasers; Electrons; Epitaxial growth; Optical materials; Optical saturation; Printing; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location
Kagazwa, Japan
Print_ISBN
4-930813-51-4
Type
conf
DOI
10.1109/ISLC.1992.763628
Filename
763628
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