Title :
High temperature and high power operation of mode stabilized GaInP/AlGaInP Strained MQW Lasers
Author :
Mannoh, M. ; Kamiyama, S. ; Hoshina, J. ; Kidoguchi, I. ; Ohta, H. ; Ishibashi, A. ; Ban, Y. ; Ohnaka, K.
Author_Institution :
Matsushita Electric Industrial Co., Ltd.
Abstract :
We report, for the first time, on high temperature and high power operation (50mW up to 100/spl deg/C) of transverse-mode stabilized 677nm AlGalnP visible lasers employing compressive strained multiquantum well (MQW) active layer.
Keywords :
Aging; Epitaxial layers; Laser modes; Laser stability; Optical films; Power generation; Power lasers; Quantum well devices; Semiconductor lasers; Temperature;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763630
