Title :
Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs Cladding Layers
Author :
Unger, P. ; Bona, G.L. ; Germann, R. ; Roentgen, P. ; Webb, D.J.
Author_Institution :
Zurich Research Laboratory
Abstract :
Low-threshold strained GalnP quantum well ridge lasers with AlGaAs cladding layers have been fabricated. Due to an electroplated heat spreader the devices can be operated junction-side up at temperatures up to 90//spl deg/C.
Keywords :
Laser modes; Optical interferometry; Power generation; Power lasers; Quantum well lasers; RNA; Temperature; Thermal conductivity; Thermal resistance; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763631
