• DocumentCode
    2786938
  • Title

    Advances in cell efficiency of a-Si:H and nc-Si:H-based multi-junction solar cells for space and near-space applications

  • Author

    Banerjee, A. ; Xu, X. ; Beernink, K. ; Liu, F. ; Lord, K. ; DeMaggio, G. ; Yan, B. ; Su, T. ; Pietka, G. ; Worrel, C. ; Ehlert, S. ; Beglau, D. ; Yang, J. ; Guha, S.

  • Author_Institution
    United Solar Ovonic LLC, Troy, MI, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    We have developed thin film amorphous silicon alloy (a-Si:H) and nanocrystalline silicon (nc-Si:H) based multijunction solar cells on lightweight polymer substrate ~25 μm thick for space and near-space applications. The baseline cells use an a-Si:H/a-SiGe:H/a-SiGe:H structure deposited by conventional Radio Frequency (RF) plasma enhanced CVD using roll-to-roll deposition. The best initial performance for the baseline cells is aperture-area efficiency 9.84% and specific power ~1200 W/kg. The baseline cells are available to potential customers in large quantities. In order to increase the solar cell efficiency, we have pursued two new approaches. In the first, we use a Modified Very High Frequency (MVHF) technique to deposit the multijunction a-SiGe:H based cells. In the second, we have investigated nc-Si:H based multijunction cells. In this paper, we present the solar cell efficiency results on the three different device structures.
  • Keywords
    amorphous semiconductors; nanostructured materials; semiconductor thin films; silicon alloys; solar cells; space power generation; thin film devices; lightweight polymer substrate; multijunction solar cells; nanocrystalline silicon based multijunction solar cells; near-space applications; radio frequency plasma enhanced CVD; roll-to-roll deposition; size 25 mum; thin film amorphous silicon alloy solar cells; Conferences; Metals; Photovoltaic cells; Polymers; Radio frequency; Substrates; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5617209
  • Filename
    5617209