Title :
1.07 /spl mu/m (InAs)/sub 1//(GaAs)/sub 2/short period superlattice strained quantum well ridge waveguide laser
Author :
Kurakake, H. ; Uchida, T. ; Soda, H. ; Yamazaki, S.
Author_Institution :
Fujitsu Laboratories Ltd.
Abstract :
High performance ridge waveguide lasers with (InAs)/sub 1//(GaAS)/sub 2/ short period superlattice (SPS) active layer have been fabricated. A characteristic temperature of 156K is obtained at 1.07 /spl mu/m wavelength.
Keywords :
Gallium arsenide; Gas lasers; Indium gallium arsenide; Indium phosphide; Laboratories; Quantum well lasers; Superlattices; Temperature dependence; Threshold current; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763639
