DocumentCode
2787028
Title
1.07 /spl mu/m (InAs)/sub 1//(GaAs)/sub 2/short period superlattice strained quantum well ridge waveguide laser
Author
Kurakake, H. ; Uchida, T. ; Soda, H. ; Yamazaki, S.
Author_Institution
Fujitsu Laboratories Ltd.
fYear
1992
fDate
21-25 Sept. 1992
Firstpage
206
Lastpage
207
Abstract
High performance ridge waveguide lasers with (InAs)/sub 1//(GaAS)/sub 2/ short period superlattice (SPS) active layer have been fabricated. A characteristic temperature of 156K is obtained at 1.07 /spl mu/m wavelength.
Keywords
Gallium arsenide; Gas lasers; Indium gallium arsenide; Indium phosphide; Laboratories; Quantum well lasers; Superlattices; Temperature dependence; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location
Kagazwa, Japan
Print_ISBN
4-930813-51-4
Type
conf
DOI
10.1109/ISLC.1992.763639
Filename
763639
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