• DocumentCode
    2787028
  • Title

    1.07 /spl mu/m (InAs)/sub 1//(GaAs)/sub 2/short period superlattice strained quantum well ridge waveguide laser

  • Author

    Kurakake, H. ; Uchida, T. ; Soda, H. ; Yamazaki, S.

  • Author_Institution
    Fujitsu Laboratories Ltd.
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    206
  • Lastpage
    207
  • Abstract
    High performance ridge waveguide lasers with (InAs)/sub 1//(GaAS)/sub 2/ short period superlattice (SPS) active layer have been fabricated. A characteristic temperature of 156K is obtained at 1.07 /spl mu/m wavelength.
  • Keywords
    Gallium arsenide; Gas lasers; Indium gallium arsenide; Indium phosphide; Laboratories; Quantum well lasers; Superlattices; Temperature dependence; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763639
  • Filename
    763639