Title :
Time-resolved studies of pulsed electrical spin injection into single InGaAs quantum dots
Author :
Asshoff, P. ; Zimmer, J. ; Füser, H. ; Hu, D.Z. ; Schaadt, D.M. ; Hetterich, M. ; Kalt, H.
Author_Institution :
DFG Center for Functional Nanostruct. (CFN), Univ. Karlsruhe (TH), Karlsruhe, Germany
Abstract :
This study investigates on the circular polarization degree (CPD) anomaly emitted by InGaAs quantum dots within a spin-light emitting diode (spin-LED) with a ZnMnSe spin aligner, when the spin-LED device is excited with nanosecond width pulses. Results show that the change of CPD must be related to spin scattering events. One factor that is responsible to these scattering events is a potential barrier that forms within the spin-LED, which the spin-polarized carriers have to pass by a tunneling process. Hence, tunnelling will only be possible if an empty target state becomes available, such as, after injecting a hole into an occupied dot and subsequent optical recombination.
Keywords :
II-VI semiconductors; III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; light emitting diodes; manganese compounds; spin polarised transport; zinc compounds; InGaAs-ZnMnSe; ZnMnSe spin aligner; circular polarization degree anomaly; hole injection; nanosecond pulse excitation; optical recombination; pulsed electrical spin injection; single InGaAs quantum dots; spin-light emitting diode; spin-polarized carriers; time-resolved studies; tunneling; Diodes; Indium gallium arsenide; Nanoscale devices; Optical scattering; Particle scattering; Polarization; Quantum dots; Space vector pulse width modulation; Spin polarized transport; Tunneling;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5192133