All-optical memory based on the injection locking bistability of a two-colour laser diode

Author

Osborne, S. ; Amann, A. ; Brien, S.O.

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

This paper presents a multi-quantum well InP/InGaAlAs two-colour Fabry-Perot laser that incorporates slotted regions in the laser ridge waveguide. A hysteresis loop of the output power in the uninjected mode as a function of the power injected in the long-wavelength primary mode . Pulse modulation of the injected power leads to switching between these states. To understand the structure of the bifurcations that lead to the observed bistability, a model of a single mode laser with optical injection is adapted.

Keywords

III-V semiconductors; aluminium compounds; bifurcation; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser mode locking; laser stability; optical bistability; optical modulation; optical waveguides; quantum well lasers; ridge waveguides; InP-InGaAlAs; all-optical memory; bifurcations; injection locking bistability; laser ridge waveguide; optical injection; pulsed modulation; two-colour Fabry-Perot laser; two-colour laser diode; Diode lasers; Fabry-Perot; Hysteresis; Indium phosphide; Injection-locked oscillators; Laser mode locking; Optical waveguides; Power generation; Pulse modulation; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5192135

Filename

5192135