Title :
Carrier leakage in 1.3/spl mu/m SCH quantum well lasers
Author :
Hausser, S. ; Harder, C. ; Meier, H.P.
Author_Institution :
IBM Research Division
Abstract :
We demonstrate 1300 nm SCH quantum well lasers grown by CBE with low threshold and high efficiency. Spontaneous emission measurements of these lasers indicate strong carrier leakage. This reduces To to values around 55 K.
Keywords :
Carrier confinement; Current density; Indium phosphide; Laboratories; Photonic band gap; Quantum well lasers; Spontaneous emission; Temperature dependence; Thermoelectric devices; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763649
