• DocumentCode
    2787216
  • Title

    Remarkable improvement in the temperature characteristics of GaAs Lasers Using an InGaAlP Cladding Layer

  • Author

    Itaya, K. ; Hatakoshi, G. ; Nishikawa, Y. ; Okajima, M.

  • Author_Institution
    Toshiba Corporation
  • fYear
    1992
  • fDate
    21-25 Sept. 1992
  • Firstpage
    236
  • Lastpage
    237
  • Abstract
    A new GaAs laser diode employing InGaAIP for the cadding layer has been successfully fabricated. A large bandgap difference between the GaAs active and the InGaAIP cladding layer reduced the electron overflow, which drasticaly improved the temperature characteristics.
  • Keywords
    Chemical lasers; DH-HEMTs; Diode lasers; Electrons; Gallium arsenide; Photonic band gap; Pump lasers; Research and development; Temperature dependence; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
  • Conference_Location
    Kagazwa, Japan
  • Print_ISBN
    4-930813-51-4
  • Type

    conf

  • DOI
    10.1109/ISLC.1992.763652
  • Filename
    763652
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2787216