Title :
Remarkable improvement in the temperature characteristics of GaAs Lasers Using an InGaAlP Cladding Layer
Author :
Itaya, K. ; Hatakoshi, G. ; Nishikawa, Y. ; Okajima, M.
Author_Institution :
Toshiba Corporation
Abstract :
A new GaAs laser diode employing InGaAIP for the cadding layer has been successfully fabricated. A large bandgap difference between the GaAs active and the InGaAIP cladding layer reduced the electron overflow, which drasticaly improved the temperature characteristics.
Keywords :
Chemical lasers; DH-HEMTs; Diode lasers; Electrons; Gallium arsenide; Photonic band gap; Pump lasers; Research and development; Temperature dependence; Threshold current;
Conference_Titel :
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location :
Kagazwa, Japan
Print_ISBN :
4-930813-51-4
DOI :
10.1109/ISLC.1992.763652
