DocumentCode
2787234
Title
Unique top-driven lasers having record-high performance by Self-Aligned Si-Zn Diffusion
Author
Zou, W.X. ; Law, K.-K. ; Merz, J.L.
Author_Institution
University of California
fYear
1992
fDate
21-25 Sept. 1992
Firstpage
238
Lastpage
239
Abstract
Planar top-driven lasers with vertical carrier injection have been fabricated by self-aligned Si-Zn diffusion. The lasers have threshold current as low as 2.0 mA and light output as high as 19 mW per facet at RT CW operation.
Keywords
Etching; Laser modes; Ohmic contacts; Optical design; P-n junctions; Silicon compounds; Substrates; Surface emitting lasers; Testing; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International
Conference_Location
Kagazwa, Japan
Print_ISBN
4-930813-51-4
Type
conf
DOI
10.1109/ISLC.1992.763653
Filename
763653
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