Title :
Influence of heterogeneity solid dielectrics on time up to breakdown
Author :
Zhurkov, M.U. ; Chernak, A.A.
Author_Institution :
Tomsk Polytech. Univ.
Abstract :
When performing research of failures of high-voltage electric insulating products, isolators etc. it is necessary to use methods of statistical analysis in processing experimental data, finding the function of distribution of failures probabilities being of great importance. Using a computer model, statistical research of isolation failures were carried out for a narrow spectrum of change of the defects characteristics, that is practically for all samples with identical defects in all volume of a sample. The distribution failure probability on the Weibull´s diagram is represented by one direct line for any narrow class of defects. The use of the computer model of solid dielectrics aging and breakdown of solid dielectrics under long influence of an electrical field allows study of both statistical and physical laws of dielectrics breakdown. In particular, it expands and deepens the understanding of defect influence on the internal structure of the solid insulator on the time up to breakdown
Keywords :
Weibull distribution; ageing; electric breakdown; electrical engineering computing; insulating materials; insulation testing; Weibull´s diagram; computer model; defect influence; defects characteristics; distribution failure probability; failures probabilities; heterogeneity influence; high-voltage electric insulation; internal structure; isolation failures; solid dielectrics aging; solid dielectrics breakdown; solid insulator; statistical analysis; statistical research; time up to breakdown; Dielectric breakdown; Dielectric materials; Electric breakdown; Manufacturing; Materials science and technology; Probability; Solid modeling; Statistical analysis; Statistical distributions; Testing;
Conference_Titel :
Modern Techniques and Technology, 2000. MTT 2000. Proceedings of the VI International Scientific and Practical Conference of Students, Post-graduates and Young Scientists
Conference_Location :
Tomsk
Print_ISBN :
0-7803-5789-2
DOI :
10.1109/SPCMTT.2000.896105