DocumentCode
2787304
Title
Femtosecond laser assisted multi-ion implantation in dielectrics
Author
Jose, Gin ; Fernandez, T. Toney ; Steenson, Paul ; Jha, A.
Author_Institution
Inst. for Mater. Res., Univ. of Leeds, Leeds, UK
fYear
2012
fDate
2-5 July 2012
Firstpage
1
Lastpage
2
Abstract
We report the simultaneous implantation of metal ions namely Te4+, Zn2+ and Na+ along with the rare-earth ion Er3+ using a femtosecond laser ablation and deposition process. Planar waveguide structures with 1.3 μm deep uniform diffusion with a maximum refractive index change (Δnmax) of 0.169 was produced in silica. This novel process will be explained using existing models with experimental verification. It has a potential to produce new materials and structures which are otherwise impossible to achieve via conventional glass and thin-film fabrication techniques. The unique possibility of diffusing rare earth ions opens new realm of photonic devices engineering.
Keywords
high-speed optical techniques; ion implantation; optical waveguides; pulsed laser deposition; refractive index; Er3+; Na+; Te4+; Zn2+; deposition process; dielectrics; femtosecond laser ablation; femtosecond laser assisted multi-ion implantation; photonic devices engineering; planar waveguide; rare-earth ion; refractive index; thin-film fabrication; wavelength 1.3 mum; Glass; Ions; Pulsed laser deposition; Silicon compounds; Ultrafast electronics; Ultrafast optics; femtosecond laser; ion implantation; pulse laser deposition; rare earth;
fLanguage
English
Publisher
ieee
Conference_Titel
Transparent Optical Networks (ICTON), 2012 14th International Conference on
Conference_Location
Coventry
ISSN
2161-2056
Print_ISBN
978-1-4673-2228-7
Electronic_ISBN
2161-2056
Type
conf
DOI
10.1109/ICTON.2012.6253724
Filename
6253724
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