DocumentCode :
2787315
Title :
Ground rule slack aware tolerance-driven optical proximity correction for local metal interconnects
Author :
Banerjee, Shayak ; Agarwal, Kanak ; Orshansky, Michael
Author_Institution :
University of Texas - Austin, USA
fYear :
2010
fDate :
19-22 Sept. 2010
Firstpage :
1
Lastpage :
4
Abstract :
The current method of communicating process capabilities to the designer is in the form of ground rules. However, due to constraints on the complexity and number of rules, there may exist shapes that are design-rule clean but difficult to manufacture. This problem is exacerbated in local routes drawn on 1x metal (M1) which allows highly bi-directional shapes at tight spacing. On the other hand, local M1 routes have low parasitic resistance and capacitance as compared to device impedances. Hence there exists an opportunity to perturb these shapes to improve their manufacturability without significant performance impact. We propose to guide this perturbation by the amount of leeway available between the designed values and the ground rules - which we refer to as ground rule slack. In this paper, we utilize ground rule slack to generate tolerance bands for layout features. We further develop a tolerance-driven optical proximity correction (TD-OPC) algorithm which utilizes such tolerance bands to find a lithographically optimal mask solution for manufacturing. Our experiments on sample layouts shows that the use of this methodology helps reduce lithographic hotspots by 59% in comparison to process window optical proximity correction.
Keywords :
design for manufacture; optical interconnections; proximity effect (lithography); bi-directional shapes; capacitance; ground rule slack aware tolerance-driven optical proximity correction; local metal interconnects; parasitic resistance; process window optical proximity correction; tight spacing; Adaptive optics; Algorithm design and analysis; Layout; Lithography; Metals; Shape;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2010 IEEE
Conference_Location :
San Jose, CA
ISSN :
0886-5930
Print_ISBN :
978-1-4244-5758-8
Type :
conf
DOI :
10.1109/CICC.2010.5617379
Filename :
5617379
Link To Document :
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