Title :
Multiple Wavelength Emission From Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD
Author :
Yu, Hongbo ; Jung, Taeil ; Lee, L.K. ; Ku, P.C.
Author_Institution :
Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, 48109, USA
Abstract :
Multiple wavelength emission is experimentally observed from semipolar InGaN/GaN quantum wells selectively grown by MOCVD. Selective growth rates on different mask opening areas result in a multiple wavelength emission from the same wafer.
Keywords :
Epitaxial growth; Gallium nitride; Light emitting diodes; MOCVD; Monolithic integrated circuits; Quantum computing; Quantum well devices; Scanning electron microscopy; Silicon compounds; Temperature;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431327
