DocumentCode
2787367
Title
Design of low-noise CMOS MEMS accelerometer with techniques for thermal stability and stable DC biasing
Author
Tan, S.S. ; Liu, C.Y. ; Yeh, L.K. ; Chiu, Y.H. ; Lu, Michael S C ; Hsu, Klaus Y J
Author_Institution
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear
2010
fDate
19-22 Sept. 2010
Firstpage
1
Lastpage
4
Abstract
An integrated high-sensitivity CMOS MEMS capacitive accelerometer with thermal stability has been designed and demonstrated in this work. Issue of obtaining stable DC bias at input terminals is particularly addressed. Sensitivity of 595 mV/g is achieved in the accelerometer and the overall noise floor is 50 μg/√Hz, which corresponds to an effective capacitance noise floor of 0.024 aF/√Hz. The zero-g thermal variation is as low as 1.68 mg/°C.
Keywords
CMOS integrated circuits; accelerometers; low-power electronics; micromechanical devices; thermal stability; capacitance noise; low-noise CMOS MEMS accelerometer; stable DC biasing; thermal stability; Accelerometers; CMOS integrated circuits; Micromechanical devices; Silicon; Temperature sensors; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference (CICC), 2010 IEEE
Conference_Location
San Jose, CA
ISSN
0886-5930
Print_ISBN
978-1-4244-5758-8
Type
conf
DOI
10.1109/CICC.2010.5617382
Filename
5617382
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