Title :
Design of low-noise CMOS MEMS accelerometer with techniques for thermal stability and stable DC biasing
Author :
Tan, S.S. ; Liu, C.Y. ; Yeh, L.K. ; Chiu, Y.H. ; Lu, Michael S C ; Hsu, Klaus Y J
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
An integrated high-sensitivity CMOS MEMS capacitive accelerometer with thermal stability has been designed and demonstrated in this work. Issue of obtaining stable DC bias at input terminals is particularly addressed. Sensitivity of 595 mV/g is achieved in the accelerometer and the overall noise floor is 50 μg/√Hz, which corresponds to an effective capacitance noise floor of 0.024 aF/√Hz. The zero-g thermal variation is as low as 1.68 mg/°C.
Keywords :
CMOS integrated circuits; accelerometers; low-power electronics; micromechanical devices; thermal stability; capacitance noise; low-noise CMOS MEMS accelerometer; stable DC biasing; thermal stability; Accelerometers; CMOS integrated circuits; Micromechanical devices; Silicon; Temperature sensors; Thermal stability;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2010 IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-5758-8
DOI :
10.1109/CICC.2010.5617382
