Wafer fused optically-pumped semiconductor disk laser operating at 1220- nm

A novel approach based on a wafer fused optically-pumped semiconductor disk laser (SDL) operating at 1.2 mum is reported. The technique allows integrating materials with different lattice constants and provides convenient means to extend the operation wavelength of an SDL. This work demonstrates the first wafer fused optically-pumped semiconductor disk laser operating at the 1.2 m wavelength regime. The performance of the laser could be further improved by using a 920 nm pump source to achieve higher pump absorption in the active region. The active region and the distributed Bragg reflector (DBR) were grown separately with molecular beam epitaxy. The active region, grown on an InP-substrate, consists of 5 AlGalnAs quantum well pairs positioned using InP-spacer to the antinode of the standing wave created between the DBR and the semiconductor-air interface.