DocumentCode :
27874
Title :
Analysis of the Switching Variability in 
-Based RRAM Devices
Author :
Gonzalez, M.B. ; Rafi, J.M. ; Beldarrain, O. ; Zabala, M. ; Campabadal, F.
Author_Institution :
Inst. de Microelectron. de Barcelona (CNMCSIC), Campus Univ. Autonoma de Barcelona (UAB), Bellaterra, Spain
Volume :
14
Issue :
2
fYear :
2014
fDate :
Jun-14
Firstpage :
769
Lastpage :
771
Abstract :
In this letter, we focus on the cycle-to-cycle variability of the low resistive state in Ni/HfO2-based resistive switching structures. The results show that several discrete current levels can individually last hundreds of cycles. They are a result of the random nature of the reversible conductive path formation through percolation processes, which could be attributed to a different shape, size, or number of conductive filaments. After successive cycles, the same or new filaments will nucleate in the weaker zones of the dielectric. In addition, the switching voltages related to the creation and dissolution of localized conductive paths are found to be statistically associated.
Keywords :
hafnium compounds; nickel; percolation; random-access storage; semiconductor device testing; switching circuits; Ni-HfO2; RRAM devices; conductive filaments; cycle-to-cycle variability; discrete current levels; localized conductive paths; percolation processes; resistive random access memories; resistive state; resistive switching structures; reversible conductive path formation; switching variability; switching voltages; Electrodes; Hafnium compounds; Nickel; Random access memory; Shape; Switches; $hbox{HfO}_{2}$; Conductive filament (CF); Ni; resistive random access memory (RRAM); unipolar switching; variability;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2014.2311231
Filename :
6763037
Link To Document :
